ASEMI充电器整流桥ABS10.docx

《ASEMI充电器整流桥ABS10.docx》由会员分享，可在线阅读，更多相关《ASEMI充电器整流桥ABS10.docx（2页珍藏版）》请在第一文库网上搜索。

1、CURRENT 1.0 AmpereVOLTAGE RANG 50 to 1000 VoltsFEATURESABS2 THRU ABS10MINI-SOP This series is SGS listed under the RecognizedComponent Index, file number SZXEC1902259902 Glass passivated junction Ideal for printed circuit board Reliable low cost construction utilizing moldedplastic technique High te

2、mperature soldering guaranteed:26o0c / io seconds / 0.375m ( 9.5mm)lead length at s lbs.,( 2.3 kg)tension Small size, simple installationPure tin plated terminal , Lead free. Leadssolderable per MIL-STD-202, Method 2o High surge current capabilityMECHANICAL DATA9 Case: Molded plastic bodyMounting po

3、sition : as Markingso Weight: 0.12 gramsF0.174(4.4)0.150(3.8)6lo)9ooo 0.21(5.4) 0.193(4.9)JQ匕0.033(0.85)-0.022(0.55).2 (osL)6go6()詈o-字L)9lnoo-0.059(1.5)0.008(0.2)&9)zgL.0l9)ezolCOS69L0 6)rou=070Dimensions in inches and (millimeters)Maximum Ratings and Electrical CharacteristicsRating at 25 ambient t

4、emperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%Type NumberSymbolABS2ABS4ABS6ABS8ABS10UnitsMaximum Recurrent Peak Reverse VoltageVrrm2004006008001000VMaximum RMS VoltageVrms140280420560700VMaximum DC Blocking

5、 VoltageVdc2004006008001000VMaximum Average Forward Rectified CurrentOn glass-epoxy P.C.B.On aluminum substrate(AV)1.0APeak Forward Surge Current, 8.3 ms SingleHalf Sine-wave Superimposed on RatedLoad (JEDEC method )FSM30AMaximum Instantaneous Forward Voltage 1.0AVf1.05VMaximum DC Reverse Current Ta

6、=25 Cat Rated DC Blocking VoltageR10uAuATypical Thermal resistance Junction to LeadOn aluminum substrateOn Glass-Epoxy substrateRjlRja2562.580/wOperating Temperature RangeTj-55 to +150Storage Temperature RangeTsTG-55 to +150CURRENT 1.0 AmpereVOLTAGE RANG 50 to 1000 VoltsASEMI Bridge RectifierABS2 TH

7、RU ABS10Rating and Characteristic Curves (TA=250c uessotherwise noted)FIG.1- MAXIMUM FORWARD CURRENT DERATINGCURVEFORWARD VOLTAGE. (V)(4).1N 山Bun。(rM(r0L sno 山 NlNlsN-40 DO 1002O,40160LEAD TEMPERATURE. ()FIG.3- MAXIMUM FORWARD CURRENT DERATINGCURVE4 2 1 8 6 4t10.0 0S山B山dw4.IN 山ccBn。(rMccoLL山0Alumna

8、substrate50 8mm50 8mmSoideng land lmm1mmConductor layer 20mSubstrale thickness 0 64mm(LLd) zo-HS-Q h 山 Mod aocmou.AVERAGE FORWARD CURRENT (A)FIG.4- FORWARD POWER DISSIPATION0020406080100120140160AMBIENT TEMPERATURE. ()s山h山dwIN 山 Bcco 山0Bs QBMBOlrx 山 dFIG.5- MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENTNUMBER OF CYCLES (CYCLE)SEMI 2018.11 Rev.3.12-2